EMP107 updated 05/08/2008 5.9 ? 7.9 ghz power amplifier mmic specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised may 2008 dimension: 1130um x 2250um thickness: 85um + 15um features ? 5.9 ? 7.9 ghz operating frequency range ? 24dbm output power at 1db compression ? 19.0 db typical small signal gain ? -41dbc oimd3 @each tone pout 14 dbm applications ? point-to-point and point-to-multipoint radio ? military radar systems caution! esd sensitive device. electrical characteristics (tb = 25 c, 50 ohm, vds = 7 v, idsq = 200 ma, unless otherwise specified) symbol parameter/test conditions min typ max units f operating frequency range 5.9 7.9 ghz p1db output power at 1db gain compression 23 24 dbm gss small signal gain 17.0 19.0 db oimd3 output 3 rd order intermodulation distortion ? f=10mhz, each tone pout 14dbm, 7v, 60%+ 10%idss -41 -38 dbc input rl input return loss -12 -8 db output rl output return loss -6 db idss saturated drain current vds =3v, v gs =0v 245 285 330 ma vds drain to source voltage 7 8 v nf noise figure @7ghz 8 db rth thermal resistance (au-sn eutectic attach) 44 o c/w tb operating base plate temperature - 35 + 85 oc maximum ratings at 25c 1,2 symbol characteristic absolute continuous vds drain to source voltage 12v 8 v v gs gate to source voltage -8v - 4 v ids drain current idss 325ma i gsf forward gate current 28ma 4.5 ma p in input power 21dbm @ 3db compression t ch channel temperature 175c 150c t stg storage temperature -65/175c -65/150c p t total power dissipation 3.1w 2.6w 1. operating the device beyond any of the above rating may result in permanent damage. 2. bias conditions must also satisfy the following equation vds*ids < (t ch ?tb)/r th
EMP107 updated 05/08/2008 5.9 ? 7.9 ghz power amplifier mmic specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 2 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised may 2008 typical performance: 1. small signal performance (@7v, 200ma) 4 6 8 10 frequency (ghz) EMP107 small signal performance -25 -20 -15 -10 -5 0 5 10 15 20 25 db(|s[2,1]|) * db(|s[1,1]|) * db(|s[2,2]|) * 2. oimd vs pout @7v, 200ma (@7ghz, ? f=10mhz) 3. p-1 vs vds @idsq=200ma EMP107 oimd (dbc) vs. pout(dbm) -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 0 5 10 15 20 25 each tone pout (dbm) oi md (dbc) oimd3 oimd5 EMP107 p1db(dbm) vs. vds 19 20 21 22 23 24 25 26 27 56789 frequency (ghz) dbm vds=5v vds=7v application information (caution: this is an esd sensitive device) chip carrier should match gaas thermal coe fficienat of expansion and have high ther mal conductivity, such as copper tungsten or copper molybdenum. the chip carrier should be nickel-gold plated and capable of withstanding 325oc for 20 minutes. die attach should be done with gold/tin (80/20) eutectic alloy in inert ambient gas. the backside is used as heatsinking, dc, and rf contacts. all die attach and wire bond equipment, especially the tool s which touch a die, should be well grounded to avoid accidental discharge through a die.
EMP107 updated 05/08/2008 5.9 ? 7.9 ghz power amplifier mmic specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 3 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised may 2008 assembly drawing the length of rf wires should be as short as possible. use at least two wires between rf pad and 50 ohm line and separate the wires to minimize the mutual inductance. chip size 1130um x 2250um chip thickness: 85 15 microns pad dimensions: 100 x 100 microns all dimensions in microns chip outline
EMP107 updated 05/08/2008 5.9 ? 7.9 ghz power amplifier mmic specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 4 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised may 2008 disclaimer excelics semiconductor reserves the right to make changes without further notice to any products herein to improve reliabil ity, function or design. excelics does not assume any liability arising ou t of the application or use of any produc t or circuit described herein. life support policy excelics semiconductor products are not authorized for use as critical components in life support devices or systems with out the express written approval of excelics semiconductor, inc. as here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perf orm when properly used in accordance with instructions for use provided in the labeling, can be reasonably expect ed to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support dev ice or system, or to affect its safety or effectiveness.
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